60 nm Self-Aligned-Gate InGaAs HEMTs采用Mo金屬 - 副本
2023年12月13日發(作者:攤的四字詞語)-60 nm Self-Aligned-Gate InGaAs HEMTs with Record High-Frequency Characteristics Tae-Woo Kim, Dae-Hyun Kim and Jesús A. del Alamo Massachutts Institute of Technology (MIT),
時間:2023-12-13 熱度:6℃